Electronic properties of antidot lattices fabricated by atomic force lithography
نویسندگان
چکیده
منابع مشابه
Electronic properties of disordered graphene antidot lattices
Shengjun Yuan,1,* Rafael Roldán,2,† Antti-Pekka Jauho,3 and M. I. Katsnelson1 1Radboud University of Nijmegen, Institute for Molecules and Materials, Heijendaalseweg 135, 6525 AJ Nijmegen, The Netherlands 2Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco E28049 Madrid, Spain 3Center for Nanostructured Graphene (CNG), DTU Nanotech, Department of Microand Nanotechnology, Technical ...
متن کاملElectronic properties of graphene antidot lattices
Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes that causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three nu...
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Thomas G. Pedersen,1 Christian Flindt,2 Jesper Pedersen,2 Antti-Pekka Jauho,2,3 Niels Asger Mortensen,2 and Kjeld Pedersen1 1Department of Physics and Nanotechnology, Aalborg University, DK-9220 Aalborg Ø, Denmark 2Department of Micro and Nanotechnology, NanoDTU, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark 3Laboratory of Physics, Helsinki University of Technology, P.O. Box ...
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In this work, local AFM oxidation technique in a controlled humidity environment has been used to create small features in strained SiGe alloys. When directly oxidizing SiGe alloys, minimum line widths of 20nm were achieved by adjusting parameters such as the bias voltage on the microscope tip and the tip writing speed. It was found that when bias voltage increases, and/or when the tip writing ...
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We explore the consequences of electron-phonon (e-ph) coupling in graphene antidot lattices (graphene nanomeshes), i.e., triangular superlattices of circular holes (antidots) in a graphene sheet. They display a direct band gap whose magnitude can be controlled via the antidot size and density. The relevant coupling mechanism in these semiconducting counterparts of graphene is the modulation of ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2002
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1432767